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HyperX Impact 8GB Kit DDR4 2400MHz SODIMM Memory (2x4GB)
Hyper X Impact 8GB Kit
DDR4 2400 M Hz SODIMM
Memory (2x 4GB)
£35.45
Hyper X Impact 8GB Kit DDR4 2400 M Hz SODIMM Memory (2x 4GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 16GB Kit DDR4 2400MHz SODIMM Memory (2x8GB)
Hyper X Impact 16GB Kit
DDR4 2400 M Hz SODIMM
Memory (2x 8GB)
£70.68
Hyper X Impact 16GB Kit DDR4 2400 M Hz SODIMM Memory (2x 8GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 4GB DDR4 2133MHz SODIMM Memory
Hyper X Impact 4GB DDR4
2133 M Hz SODIMM Memory
£15.60
Hyper X Impact 4GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 8GB DDR4 2133MHz SODIMM Memory
Hyper X Impact 8GB DDR4
2133 M Hz SODIMM Memory
£31.23
Hyper X Impact 8GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 8GB DDR4 2400MHz SODIMM Memory
Hyper X Impact 8GB DDR4
2400 M Hz SODIMM Memory
£31.67
Hyper X Impact 8GB DDR4 2400 M Hz SODIMM Memory Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact Black 4GB 1866MHz DDR3L CL11 SODIMM 1.35V
Hyper X Impact Black
4GB 1866 M Hz DDR3L CL11
SODIMM 1.35V
£21.99
Hyper X HX318LS11IB/4 is a 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1 Rx 8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the Pn P Timing Parameters section below. FEATURES JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm 1%) Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe On Die Termination using ODT pin

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Available
HyperX Impact Black 8GB 1866MHz DDR3L CL11 SODIMM (Kit of 2) 1.35V Memory
Hyper X Impact Black
8GB 1866 M Hz DDR3L CL11
SODIMM (Kit Of 2)
1.35V Memory
£35.99
Hyper X HX318LS11IBK2/8 is a kit of two 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1 Rx 8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (interleave without any limit, sequential with starting address '000' only), 4 with t CCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C degrees Asynchronous Reset

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Available
HyperX Impact Black 8GB 1866MHz DDR3L CL11 SODIMM 1.35V Memory
Hyper X Impact Black
8GB 1866 M Hz DDR3L CL11
SODIMM 1.35V Memory
£32.93
Hyper X HX318LS11IB/8 is a 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2 Rx 8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the Pn P Timing Parameters section below. FEATURES JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply Bi-directional Differential Data Strobe VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset On Die Termination using ODT pin

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Available
HyperX Predator 16GB 2400MHz DDR4 Non-ECC Memory (Kit of 4)
Hyper X Predator 16GB
2400 M Hz DDR4 Non-ECC
Memory (Kit Of 4)
£81.18
Hyper X HX424C12PB2K4/16 is a kit of four 512M x 64-bit (4GB) DDR4-2400 CL12 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel Extreme Memory Profiles (Intel XMP) 2.0. Total kit capacity is 16GB. Each module has been tested to run at DDR4-2400 at a low latency timing of 12-13-13 at 1.35V. The SPDs are programmed to JEDEC standard latency DDR4-2133 timing of 15-15-15 at 1.2V. Each 288-pin DIMM uses gold contact fingers. ...
Available
HyperX Predator 16GB 2666MHz DDR4 Non-ECC Memory (Kit of 4)
Hyper X Predator 16GB
2666 M Hz DDR4 Non-ECC
Memory (Kit Of 4)
£217.99
Hyper X HX426C13PB2K4/16 is a kit of four 512M x 64-bit (4GB) DDR4-2666 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel Extreme Memory Profiles (Intel XMP) 2.0. Total kit capacity is 16GB. Each module has been tested to run at DDR4-2666 at a low latency timing of 13-14-14 at 1.35V. The SPDs are programmed to JEDEC standard latency DDR4-2133 timing of 15-15-15 at 1.2V. Each 288-pin DIMM uses gold contact fingers. ...
Available

HyperX Impact Black 16GB 1866MHz DDR3L CL11 SODIMM (Kit Of 2) 1.35V

HyperX HX318LS11IBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3L-1866 at a ow latency timing of 11-11-11 at 1.35V or 1.5V. Additional iming parameters are shown in the PnP Timing Parameters section below. JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 933MHz fCK for 1866Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential
with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.180” (30.00mm), double sided components
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Availability: In Stock
£73.00
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Product Description

Hyper X HX318LS11IBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2 Rx 8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3L-1866 at a ow latency timing of 11-11-11 at 1.35V or 1.5V. Additional iming parameters are shown in the Pn P Timing Parameters section below. JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.180” (30.00mm), double sided components

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Jargon Buster

SODIMM - Small Outline Dual in-line Memory Module - mainly used in Laptop Computers
PCB - Printed Circuit Board
OHM - A measure of resistance named after George Simon Ohm
Black - A colour which does not emit any colour of the spectrum. Black absorbs all frequencies of the spectrum.
Clock - A device used for telling the time
8-bit - 8 integers or data units. An 8-bit processor can acess 8-bits in a single operation.
Components - Multiple items used to complete the product.
Voltage - A measurement of volts.
Memory - A way to describe the way in which the brain can remember things.

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Get ready to power up your tech game with Ebuyer (https://www.ebuyer.com/)! Explore a vast selection of the latest gadgets, electronics, and computing essentials at unbeatable prices. From cutting-edge laptops and gaming PCs to home appliances and office supplies, we've got everything you need to stay connected and productive. With fast delivery and top-notch customer service, Ebuyer is your go-to destination for all things tech. Don't settle for less shop now and take your tech game to the next level with Ebuyer!
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