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HyperX Fury White Series 4GB 1600MHz DDR3 CL10 DIMM
Hyper X Fury White
Series 4GB 1600 M Hz
DDR3 CL10 DIMM
£18.84
Get in the game with Hyper X FURY. Even newbies get up to speed fast, since FURY automatically recognises its host platform & automatically overclocks to up to 1866 M Hz, providing plenty of power for your next death match. FURY's asymmetric heatspreader design lets you stand out from the crowd. It's available in black, blue, red & -- for the first time in the Hyper X line -- white, with a black PCB. So your rig can reflect your style & you can show it off with pride. It's 100-percent tested & LAN-ready plus it's backed by free technical support. Hyper X Pn P memory will run in most DDR3 systems up to the speed allowed by the manufacturer's system BIOS. Pn P cannot increase the system memory speed faster than is allowed by the manufacturer's BIOS. Hyper X FURY is available in frequency speeds from 1333 M Hz to 1866 M Hz. Reach faster speeds & higher capacities by just installing the memory, no adjustments in BIOS needed. No matter if you are an Intel or AMD gamer, the Hyper X FURY is ideal for you. To make sure it works, Hyper X FURY has been tested with popular brands of motherboards. Does your system have enough memory to get you into the game? Kits are available to max out your system's memory with up to 16GB of high-performance goodness. ...
Available
HyperX Impact 8GB Kit DDR4 2400MHz SODIMM Memory (2x4GB)
Hyper X Impact 8GB Kit
DDR4 2400 M Hz SODIMM
Memory (2x 4GB)
£35.45
Hyper X Impact 8GB Kit DDR4 2400 M Hz SODIMM Memory (2x 4GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 16GB Kit DDR4 2400MHz SODIMM Memory (2x8GB)
Hyper X Impact 16GB Kit
DDR4 2400 M Hz SODIMM
Memory (2x 8GB)
£70.68
Hyper X Impact 16GB Kit DDR4 2400 M Hz SODIMM Memory (2x 8GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 4GB DDR4 2133MHz SODIMM Memory
Hyper X Impact 4GB DDR4
2133 M Hz SODIMM Memory
£15.60
Hyper X Impact 4GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact 8GB DDR4 2133MHz SODIMM Memory
Hyper X Impact 8GB DDR4
2133 M Hz SODIMM Memory
£31.23
Hyper X Impact 8GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Available
HyperX Impact Black 16GB 1866MHz DDR3L CL11 SODIMM (Kit of 2) 1.35V
Hyper X Impact Black
16GB 1866 M Hz DDR3L
CL11 SODIMM (Kit Of 2)
1.35V
£73.00
Hyper X HX318LS11IBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2 Rx 8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3L-1866 at a ow latency timing of 11-11-11 at 1.35V or 1.5V. Additional iming parameters are shown in the Pn P Timing Parameters section below. JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.180” (30.00mm), double sided components

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Available
HyperX Impact Black 4GB 1866MHz DDR3L CL11 SODIMM 1.35V
Hyper X Impact Black
4GB 1866 M Hz DDR3L CL11
SODIMM 1.35V
£21.99
Hyper X HX318LS11IB/4 is a 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1 Rx 8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the Pn P Timing Parameters section below. FEATURES JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm 1%) Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe On Die Termination using ODT pin

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Available
HyperX Impact Black 8GB 1866MHz DDR3L CL11 SODIMM (Kit of 2) 1.35V Memory
Hyper X Impact Black
8GB 1866 M Hz DDR3L CL11
SODIMM (Kit Of 2)
1.35V Memory
£35.99
Hyper X HX318LS11IBK2/8 is a kit of two 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1 Rx 8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (interleave without any limit, sequential with starting address '000' only), 4 with t CCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C degrees Asynchronous Reset

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Available
HyperX Impact Black 8GB 1866MHz DDR3L CL11 SODIMM 1.35V Memory
Hyper X Impact Black
8GB 1866 M Hz DDR3L CL11
SODIMM 1.35V Memory
£32.93
Hyper X HX318LS11IB/8 is a 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2 Rx 8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the Pn P Timing Parameters section below. FEATURES JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply Bi-directional Differential Data Strobe VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset On Die Termination using ODT pin

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Available
HyperX Predator 16GB 2400MHz DDR4 Non-ECC Memory (Kit of 4)
Hyper X Predator 16GB
2400 M Hz DDR4 Non-ECC
Memory (Kit Of 4)
£81.18
Hyper X HX424C12PB2K4/16 is a kit of four 512M x 64-bit (4GB) DDR4-2400 CL12 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel Extreme Memory Profiles (Intel XMP) 2.0. Total kit capacity is 16GB. Each module has been tested to run at DDR4-2400 at a low latency timing of 12-13-13 at 1.35V. The SPDs are programmed to JEDEC standard latency DDR4-2133 timing of 15-15-15 at 1.2V. Each 288-pin DIMM uses gold contact fingers. ...
Available

HyperX Impact 8GB DDR4 2400MHz SODIMM Memory

HyperX Impact 8GB DDR4 2400MHz SODIMM Memory HyperX HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows: PnP JEDEC TIMING PARAMETERS: JEDEC/PnP: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP - 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal
banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL(IDD) 14 cycles Row Cycle Time (tRCmin) 46.75ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V - 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC *Power will vary depending on the SDRAM used.
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Availability: In Stock
£31.67
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Product Description

Hyper X Impact 8GB DDR4 2400 M Hz SODIMM Memory Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Jargon Buster

SODIMM - Small Outline Dual in-line Memory Module - mainly used in Laptop Computers
4GB - 4 Gigabytes
Intel - World leaders in silicon chip development and manufacture. Chips for Laptops, desktops and mobile devices. Their main competitor is AMD (Advanced Micro Devices)
8-bit - 8 integers or data units. An 8-bit processor can acess 8-bits in a single operation.
Components - Multiple items used to complete the product.
Electrical - Something that requires electricity to work.
Memory - A way to describe the way in which the brain can remember things.

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Page Updated: 2024-02-28 09:26:27

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