Value RAM's KVR26S19D832 is a 4G x 64-bit (32GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) 2 Rx 8 non-ECC memory module based on sixteen 2G x 8-bit FBGA components The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 12V This 260-pin DIMM uses gold contact fingers Power Supply VDD 12V Typical VDDQ 12V Typical VPP 25V Typical VDDSPD 22V to 36 V Nominal & dynamic on-die termination (ODT) for data strobe & mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation & calibration Dual-rank On-board I2 serial presence-detect (SPD) EEPROM16 internal banks; 4 groups of 4 banks each Fixed burst chop (BC) of 4 & burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Fly-by topology Terminated control command & address bus PCB Height 118” (3000mm) Ro HS Compliant & Halogen-Free Series Kingston Value RAMDDR Type SODIMM DDR4 Size 1 x 32GBSpeed 2666 MHz Compliance PC4-21300 Pins 260-pin CAS Latency 19-19-19 Data Integrity Check Non-ECCVoltage 12V ...

Value RAM's KVR26N19D832 is a 4G x 64-bit (32GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) 2 Rx 8 memory module based on sixteen 2G x 8-bit FBGA components The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 12V Each 288-pin DIMM uses gold contact fingers Power Supply VDD 12V Typical VDDQ 12V Typical VPP 25V Typical VDDSPD 22V to 36 V Nominal & dynamic on-die termination (ODT) for data strobe & mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation & calibration Dual-rank On-board I2 serial presence-detect (SPD) EEPROM16 internal banks; 4 groups of 4 banks each Fixed burst chop (BC) of 4 & burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Fly-by topology Terminated control command & address bus PCB Height 123” (3125mm) Ro HS Compliant & Halogen-Free Series Kingston Value RAMDDR Type DDR4 Size 1 x 32GBSpeed 2666 MHz Compliance PC4-21300 Pins 288-pin CAS Latency CL19 Data Integrity Check Non-ECCVoltage 12 V Timings 19-19-19 Heatsink No ...

Value RAM's KVR32N22D832 is a 4G x 64-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) 2 Rx 8 memory module based on sixteen 2G x 8-bit FBGA components The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 12V Each 288-pin DIMM uses gold contact fingers Power Supply VDD 12V Typical VDDQ 12V Typical VPP 25V Typical VDDSPD 22V to 36 V Nominal & dynamic on-die termination (ODT) for data strobe & mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation & calibration Dual-rank On-board I2 serial presence-detect (SPD) EEPROM16 internal banks; 4 groups of 4 banks each Fixed burst chop (BC) of 4 & burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Fly-by topology Terminated control command & address bus PCB Height 123” (3125mm) Ro HS Compliant & Halogen-Free Series Kingston Value RAMDDR Type DDR4 Size 1 x 32GBSpeed 3200 MHz Compliance PC4-25600 Pins 288-pin CAS Latency CL22 Data Integrity Check Non-ECCVoltage 12 V Timings 22-22-22 Heatsink No ...

Kingston 4GB (1x 4GB) Memory Module 2133 M Hz DDR4 CL15 Non-ECC Unbuffered SODIMM 260-Pin Value RAM&s 512M x 64-bit (4GB) DDR4-2133 CL15 SDRAM (Synchronous DRAM) 1 Rx 8 non-ECC memory module based on eight 512M x 8-bit FBGA components The SPD is programmed to JEDEC standard latency DDR4-2133 timing of 15-15-15 at 12V This 260-pin SODIMM uses gold contact fingers Power Supply VDD12V Typical VDDQ 12V Typical VPP
- 25V Typical VDDSPD22V to 36V Nominal & dynamic on-die termination (ODT) for data strobe & mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation & calibration Single-rank On-board I2 serial presence-detect (SPD) EEPROM 16 internal banks; 4 groups of 4 banks each Fixed burst chop (BC) of 4 & burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Fly-by topology Terminated control command & address bus PCB Height 118 inch (3000mm) Ro HS Compliant & Halogen-Free Memory Memory Size 4096 MB (1 module (s) x 4096 MB ) Memory Type DDR4 Memory Speed 2133 MHz Memory Package SO-DIMM Pin Configuration 260 pins Bus IO Configuration Unbuffered Error Correction Non ECC CAS Latency CL 15 Electrical Voltage 12 V Environmental Operating Temperature 0 to 85 °C Non Operating Temperature -55 to 100 °C
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Value RAM's KVR26S19S64 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) 1 Rx 16 memory module based on four 512M x 16-bit FBGA components The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 12V This 260-pin SODIMM uses gold contact fingers Power Supply VDD 12V Typical VDDQ 12V Typical VPP 25V Typical VDDSPD 22V to 36 V Nominal & dynamic on-die termination (ODT) fordata strobe & mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation & calibration Single-rank On-board I2 serial presence-detect (SPD) EEPROM8 internal banks; 2 groups of 4 banks each Fixed burst chop (BC) of 4 & burst length (BL) of 8via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Fly-by topology Terminated control command & address bus PCB Height 118 (3000mm) Ro HS Compliant & Halogen-Free Series Kingston Value RAMDDR Type SODIMM DDR4 Size 1 x 4GBSpeed 2666 MHz Compliance PC4-21300 Pins 260-pin CAS Latency 19-19-19 Data Integrity Check Non-ECCVoltage 12V ...

This document describes Value RAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) 1 Rx 8 memory module based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 15V This 240-pin DIMM uses gold contact fingers The electrical & mechanical specifica- tions are as follows- JEDEC standard 15V (1425V 1575V) Power Supply- VDDQ 15V (1425V 1575V)- 667 M Hz f CK for 1333 Mbsecpin- 8 independent internal bank- Programmable CAS Latency 9 8 7 6- Programmable Additive Latency 0 CL
- 2 or CL
- 1 clock- Programmable CAS Write Latency (CWL) 7 (DDR3-1333)- 8-bit pre-fetch- Burst Length 8 (Interleave without any limit sequential with starting address &8220;000” only) 4 with t CCD 4 which does not allow seamless read or write either on the fly using A12 or MRS- Bi-directional Differential Data Strobe- Internal (self) calibration Internal self calibration through ZQ pin (RZQ 240 ohm &177; 1)- On Die Termination using ODT pin- Average Refresh Period 78us at lower than TCASE 85&176;C 39us at 85&176;C &60; TCASE &60; 95&176;C- Asynchronous Reset- PCB Height 0740” (1875mm) or 1180” (3000mm) Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size)1 x 4 GBInternal memory 4 GBComponent for P Cserver Memory form factor 240-pin DIMMCAS latency 9 Memory voltage 15 VMemory bus 64 bit Lead plating Gold Module configuration 512M x 64 Row cycle time 49125 ns Refresh row cycle time 260 ns Row active time 36 ns SPD profile Yes Memory ranking 1ECCNo Memory clock speed 1333 MHz Internal memory type DDR3

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4GB 1 Rx 8 512M x 64-Bit PC3-10600 CL9 204-Pin SODIMM Value RAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) 1 Rx 8 memory module based on eight 512M x 8-bit DDR3-1333 FBGA components The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 15V This 204-pin SODIMM uses gold contact fingers Features&8226; JEDEC standard 15V (1425V 1575V) Power Supply&8226; VDDQ 15V (1425V 1575V)&8226; 667 M Hz f CK for 1333 Mbsecpin&8226; 8 independent internal bank&8226; Programmable CAS Latency 9 8 7 6&8226; Programmable Additive Latency 0 CL
- 2 or CL
- 1 clock&8226; Programmable CAS Write Latency (CWL) 7 (DDR3-1333)&8226; 8-bit pre-fetch&8226; Burst Length 8 (Interleave without any limit sequential withstarting address &8220;000” only) 4 with t CCD 4 which does notallow seamless read or write either on the fly using A12 or MRS&8226; Bi-directional Differential Data Strobe&8226; Internal (self) calibration Internal self calibration through ZQpin (RZQ 240 ohm &177; 1)&8226; On Die Termination using ODT pin&8226; Average Refresh Period 78us at lower than TCASE 85&176;C39us at 85&176;C &60; TCASE &60; 95&176;C&8226; Asynchronous Reset&8226; PCB Height 118” (30mm) double sided component Series Kingston Value RAMDDR Type SODIMM DDR3 Size 1 x 4GBSpeed 1333 MHz Compliance PC3-10600 Pins 204-pin CAS Latency CL9 Data Integrity Check Non-ECCVoltage 15 V Additional Information Single rank Unbuffered

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Memory Memory layout (modules x size)1 x 4 GBInternal memory 4 GBComponent for Notebook Memory form factor 260-pin SO-DIMMCAS latency 17 Memory voltage 12 VLead plating Gold Module configuration 512M x 64 Row cycle time 4575 ns Refresh row cycle time 350 ns Row active time 32 ns ECCNo Memory clock speed 2400 MHz Internal memory type DDR4 Programming power voltage (VPP)25 V ...

This document describes Value RAM's KVR26N19S64 is a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) 1 Rx 16 memory module based on four 512M x 16-bit FBGA components The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 12V Each 288-pin DIMM uses gold contact fingers &8226; Power Supply VDD 12V Typical &8226; VDDQ 12V Typical &8226; VPP 25V Typical &8226; VDDSPD 22V to 36V &8226; Nominal & dynamic on-die termination (ODT) for data strobe & mask signals &8226; Low-power auto self refresh (LPASR) &8226; Data bus inversion (DBI) for data bus &8226; On-die VREFDQ generation & calibration &8226; Single-rank &8226; On-board I2 serial presence-detect (SPD) EEPROM &8226; 8 internal banks; 2 groups of 4 banks each &8226; Fixed burst chop (BC) of 4 & burst length (BL) of 8 via the mode register set (MRS) &8226; Selectable BC4 or BL8 on-the-fly (OTF) &8226; Fly-by topology &8226; Terminated control command & address bus &8226; PCB Height 123” (3125mm) &8226; Ro HS Compliant & Halogen-Free ...

Bring your HD videos to life Kingston’s Canvas Select™ micro SD card is designed to be reliable making it ideal for filming in HD & shooting high-resolution photos You can be confident that your memories will be safe when documenting life’s adventures on your Android™ smartphone or point-&-shoot camera It’s available in multiple capacities up to 256GB to provide plenty of space to capture an entire trip Kingston Canvas cards are tested to be durable so you can take them anywhere with the confidence that your photos videos & other data will be protected even in harsh or unstable conditions- Class 10 UHS-I speeds up to 80 M Bs read- Multiple capacities up to 256GB- Built & tested to withstand harsh environments Some of the listed capacity on a Flash storage device is used for formatting & other functions & is thus not available for data storage As such the actual available capacity for data storage is less than what is listed on the products For more information go to Kingston’s Flash Guide at kingstoncomflashguide IECEN 60529 IPX7 certified for protection against continual water submersion for up to 30 min & a depth of up to 1m Withstands temperature range from -25 C to 85 C Based on MIL-STD-883H METHOD 20025 military standard test method Protected against X-ray exposure based on ISO7816-1 guidelines Speed may vary due to host & device configuration Memory Capacity 64 GBRead speed 80 MBs Write speed 10 MBs Internal memory type UHS-IFlash memory class Class 10 Flash card type Micro SDXCUHS Speed Class Class 1 (U1) Performance Other operating systems supported Android Design Certification CE VCCI FCCTechnical details Colour of product Black Internal memory type UHS-ISupported file systems FAT32ex FATProtection features Shock resistant Temperature proof Vibration proof Water resistant X-ray-proof Memory voltage 33 VMemory adapter included SDUHS Speed Class Class 1 (U1)SD adapter

Dimensions (Wx Dx H) 24 x 21 x 32 mm Capacity 64 GBPower Memory voltage 33 VOperational conditions Operating temperature (T-T) -25
- 85 CStorage temperature (T-T) -40
- 85 C



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