A silicon photodiode fabricated in PIN planar technology that can be operated either as a photodiode with reverse voltage or as a photovoltaic cell. The device is in a 5mm package & has solder tab terminals with 2.54mm 0.1in. lead spacing. A daylight filter option SFH2030F is also available. Short leadflat on body denotes cathode. Specifications SFH2030 SFH2030 F Reverse voltage 30V 30 V Power dissipation 100m W 100m W Spectral sensitivity VR5V 8050n Alx Wavelength 950nm Ee 0.5m Wcm 2 2515n Alx Wavelength at max.sensitivity 850nm 900nm Spectral range ofphotosensitivity 400 to 800 to 1100nm 1000nm Spectral sensitivitywavelength 850nm 0.62AW 0.62AWHalf angle plusmn 20 plusmn 20 Forward voltage ...

A silicon photodiode fabricated in PIN planar technology that can be operated either as a photodiode with reverse voltage or as a photovoltaic cell. The device is in a 5mm package & has solder tab terminals with 2.54mm 0.1in. lead spacing. A daylight filter option SFH2030F is also available. Short leadflat on body denotes cathode. Specifications SFH2030 SFH2030 F Reverse voltage 30V 30 V Power dissipation 100m W 100m W Spectral sensitivity VR5V 8050n Alx Wavelength 950nm Ee 0.5m Wcm 2 2515n Alx Wavelength at max.sensitivity 850nm 900nm Spectral range ofphotosensitivity 400 to 800 to 1100nm 1000nm Spectral sensitivitywavelength 850nm 0.62AW 0.62AWHalf angle plusmn 20 plusmn 20 Forward voltage ...

A highly sensitive linear NPN silicon phototransistor enclosed in a tubular 5mm plastic package that can be easilymounted into holes & preformed plastic sleeves e.g. LED mounting assemblies. The device features a clear plastic lens a 50 acceptance angle & a very low dark current. The collector has the shortest leg & is next to the flat on the package base. Specifications Wavelength of maximumphotosensitivity 850nm Spectral range of photosensitivity 420nm to 1130nm Half angleplusmn 25 Capacitance 6.5p F Collector emitter voltage 35 V Collector current 50m A Collector peak current 100m A t 10micros Power dissipation at 25 C200m W Dark current 5n A Photocurrent collector to emitter 1000lux Vsubcesub 5V0.63m A to 1.25m A ...

A Ga As infrared emittingdiode in a standard T1 3mm size plastic package that has been designed for a variety of low-cost high volume applications e.g. IR remote control & other consumer & entertainment products. The device is an excellentmatch with SFH309 phototransistor & features high pulse power good long term stability & a 40 wide beam. Lead spacing 2.54mm. Specifications Peak wavelength emission Isub Fsub 100m A tsub Psub 20ms 950plusmn 20nm Spectral bandwidth at 50 of Isub MAXsub at Isub Fsub 100m A tsub Psub 20ms 55nm Radiant intensity Isub Fsub 100m A tsub Psub 20ms 16m Wsr Isub Fsub 1A tsub Psub 100micros 150m Wsr Total radiant flux Isub Fsub 100m A tsub Psub 20ms 14m W Half angleplusmn 20 Switch time Isub Fsub 100m A1micros Forward current 100m A Reverse voltage 5VSurge current t 10micros 3AForward voltage Isub Fsub 100m A1.30 V Isub Fsub 1A tsub Psub 100micros 1.9 V Breakdown voltage Isub Rsub 100micro A30 V Typical reverse current Vsub Rsub 5V0.01micro A Capacity Vsub Rsub 0V25p F Power dissipation at 25 C165m W Junction temperature 100 C ...

- A Ga As infrared emitting diode in a standard T1 3mm size plastic package
- Designed for a variety of low-cost high volume

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