- A Ga As infrared emitting diode in a standard T1 3mm size plastic package
- Designed for a variety of low-cost high volume applications e.g. IR remote control & smoke detector
- Excellent match with SFH309 phototransistor
- Features high pulse power good long-term stability & a 40deg wide beam
- Lead spacing 2.54mm A Ga As infrared emittingdiode in a standard T1 3mm size plastic package that has been designed for a variety of low-cost high volume applications e.g. IR remote control & other consumer & entertainment products. The device is an excellentmatch with SFH309 phototransistor & features high pulse power good long term stability & a 40 wide beam. Lead spacing 254mm. Specifications Peak wavelength emission Specifications Peak wavelength emission Isub Fsub 100m A tsub Psub 20ms 950plusmn 20nm Spectral bandwidth at 50 of Isub MAXsub at Isub Fsub 100m A tsub Psub 20ms 55nm Radiant intensity Isub Fsub 100m A tsub Psub 20msgreater than or equal to 6m Wsr Isub Fsub 1A tsub Psub 100micros 150m Wsr Total radiant flux Isub Fsub 100m A tsub Psub 20ms 14m W Half angleplusmn 20deg Switch time Isub Fsub 100m A1micros Forward current 100m A Reverse voltage 5VSurge current t 10micros 3AForward voltage Isub Fsub 100m A1.3 V Isub Fsub 1A tsub Psub 100micros 1.9 V Breakdown voltage Isub Rsub 100micro A30 V Typical reverse current Vsub Rsub 5V0.01micro A Capacity Vsub Rsub 0V25p F Power dissipation at 25 C165m W Junction temperature 100deg C