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Hyper X Impact 8GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact 8GB Kit DDR4 2400 M Hz SODIMM Memory (2x 4GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X HX424S14IB2/8 is a 1G x 64-bit (8GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 1G x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Features Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) Specifications CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 45.75ns (min.) Refresh to Active/ Refresh 350ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0°C to 85°C Storage Temperature -55°C to +100°C

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Hyper X Impact 8GB DDR4 2400 M Hz SODIMM Memory Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact 8GB Kit DDR4 2133 M Hz SODIMM Memory (2x 4GB) Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact memory boasts a fast SO-DIMM frequency -- 2666 MHz -- to keep you ahead of the curve & level up your game. It automatically recognises the platform it's plugged into & auto overclocks to the highest frequency published (up to 2133 MHz) with no need to adjust system BIOS settings. So you get extreme performance that supports notebooks using either AMD or Intel CPU technologies with no hassle. Impact makes your game hotter while keeping your system cool. Its has low voltage settings at 1.35V for less power consumption, reduced heat generation & quiet computing. Its slim, sleek look lets you stand out in the crowd, while the thin thermal label allows for installation in slim or ultra-slim notebooks. Best of all, Hyper X Impact delivers high performance at a low cost. It's gamer-approved & backed by free technical support & reliability. ...

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Hyper X HX318LS11IB/4 is a 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1 Rx 8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the Pn P Timing Parameters section below. FEATURES JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm 1%) Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe On Die Termination using ODT pin

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Hyper X HX318LS11IBK2/8 is a kit of two 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1 Rx 8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (interleave without any limit, sequential with starting address '000' only), 4 with t CCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C degrees Asynchronous Reset

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Hyper X HX318LS11IB/8 is a 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2 Rx 8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the Pn P Timing Parameters section below. FEATURES JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply Bi-directional Differential Data Strobe VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset On Die Termination using ODT pin

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Available

Get your Hyper X Cloud Alpha™ ready for the road with the Hyper X In-Line Mic. Just detach the standard mic & swap out the audio cable with the slim in-line mic. Easily answer or end phone calls & conveniently control your streaming media with a single button. The flexible, braided aux cable is designed to take the wear & tear of travel & gaming. Travel ready for mobile calls on the go Answer or end calls with ease Intuitive media controls Flexible braided cable Take calls on the go with your Hyper X Cloud Alpha Give your headset a portability upgrade with an in-line mic. Answer & end calls with ease Convenient control of your phone calls at your fingertips. One-button media controls Play media, pause, & advance tracks with a single button. Flexible, braided cable Tough braided cable designed to last. ...

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HyperX Impact Black 16GB 1866MHz DDR3L CL11 SODIMM (Kit Of 2) 1.35V

HyperX HX318LS11IBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3L-1866 at a ow latency timing of 11-11-11 at 1.35V or 1.5V. Additional iming parameters are shown in the PnP Timing Parameters section below. JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 933MHz fCK for 1866Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential
with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.180” (30.00mm), double sided components

Availability: In Stock
Supplier: Ebuyer
SKU: 707765

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Product Description

Hyper X HX318LS11IBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2 Rx 8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3L-1866 at a ow latency timing of 11-11-11 at 1.35V or 1.5V. Additional iming parameters are shown in the Pn P Timing Parameters section below. JEDEC standard 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) & 1.5V (1.425V ~ 1.575V) 933 M Hz f CK for 1866 Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.180” (30.00mm), double sided components

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Jargon Buster

SODIMM - Small Outline Dual in-line Memory Module - mainly used in Laptop Computers

PCB - Printed Circuit Board

OHM - A measure of resistance named after George Simon Ohm

Black - A colour which does not emit any colour of the spectrum. Black absorbs all frequencies of the spectrum.

Clock - A device used for telling the time

8-bit - 8 integers or data units. An 8-bit processor can acess 8-bits in a single operation.

Components - Multiple items used to complete the product.

Voltage - A measurement of volts.

Memory - A way to describe the way in which the brain can remember things.

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Ebuyer.com is an uber cool website for those looking for latest electronic gadgets. With host of freebies and discounted prices across a range of electronic devices right from computers to household appliances, Ebuyer has the distinction of being one of the prominent online electronic gadget retailers in UK. The site showcases over 19,000 quality products from reputed brands such as Apple, Sony, HP and Acer. Computing devices on offer include desktops, tablets, laptops and smart phones, hard drives, flash memory, memory, processors, graphics cards from AMD and NVIDIA, motherboards and other computer components, peripherals, software, audio visual and gaming devices. This site also has a comprehensive collection of household appliances for the homemakers.

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HyperX Impact Black 16GB 1866MHz DDR3L CL11 SODIMM (Kit Of 2) 1.35V

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