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Attack the competition with Hyper X Savage memory. Its unique, asymmetrical red heat spreader is made from high-quality aluminum & has a black PCB & a diamond cut finish to make your game shine & help you stand out in the crowd. The heat spreader dissipates heat so your system stays cool & reliable & its low profile fits under oversized CPU coolers. Featuring a design that works well with the latest trends in gaming, Hyper X Savage comes in a wide range of high-performance speeds, from 1600 M Hz to 2400 M Hz, & capacities from 4GB to 8GB in single modules & 8GB to 32GB kits. In CL9-CL11 latencies, it delivers ultra-responsive multitasking & an overall faster system. Dual & quad channel kits are available. Built-in, h&-tuned XMP profiles let users reach higher-performing frequencies, timings & voltages simply by enabling Intel's XMP tool. Even noobs can overclock their platforms with no need for manual adjustments in BIOS. Hyper X Savage is backed by a lifetime warranty & free technical support. ...

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Hyper X Impact memory boasts the world's fastest SO-DIMM frequency- 2666 M Hz
- to keep you ahead of the curve & level up your
...

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SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 44.75ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 32.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 933 M Hz f CK for 1866 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component

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Archived Product

SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 44.75ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 32.125ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 933 M Hz f CK for 1866 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component

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Archived Product

SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0C to 85C Storage Temperature -55C to +100C * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component

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Archived Product

SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component

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Archived Product

SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 44.75ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 32.125ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 933 M Hz f CK for 1866 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component

...

Archived Product

SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component

...

Archived Product

HyperX Fury 8GB DDR3-1333 CL9 240-Pin DIMM Memory Module

SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power TBD W* UL Rating 94 V - 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC *Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 667MHz fCK for 1333Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow
seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component

Availability: Out Of Stock
Supplier: Ebuyer
SKU: 633818

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Product Description

SPECIFICATIONS CL (IDD) 9 cycles Row Cycle Time (t R Cmin) 49.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 36ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 667 M Hz f CK for 1333 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component

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HyperX Fury 4GB 1866MHz DDR3 CL10 DIMM Memory Ebuyer

£29.49

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HyperX Fury 8GB DDR3-1333 CL9 240-Pin DIMM Memory Module

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