SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0C to 85C Storage Temperature -55C to +100C * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component


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SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component


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SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 44.75ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 32.125ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 933 M Hz f CK for 1866 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component


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SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 44.75ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 32.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 933 M Hz f CK for 1866 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component


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SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), single sided component


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SPECIFICATIONS CL (IDD) 10 cycles Row Cycle Time (t R Cmin) 48.125ns (min.) Refresh to Active/ Refresh 260ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 37.5ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to 85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800 M Hz f CK for 1600 Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.180” (30.00mm), double sided component


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Get in the game with Hyper X FURY. Even newbies get up to speed fast, since FURY automatically recognises its host platform & automatically overclocks to up to 1866 M Hz, providing plenty of power for your next death match. FURY's asymmetric heatspreader design lets you stand out from the crowd. It's available in black, blue, red & -- for the first time in the Hyper X line -- white, with a black PCB. So your rig can reflect your style & you can show it off with pride. It's 100-percent tested & LAN-ready plus it's backed by free technical support. Hyper X Pn P memory will run in most DDR3 systems up to the speed allowed by the manufacturer's system BIOS. Pn P cannot increase the system memory speed faster than is allowed by the manufacturer's BIOS. Hyper X FURY is available in frequency speeds from 1333 M Hz to 1866 M Hz. Reach faster speeds & higher capacities by just installing the memory, no adjustments in BIOS needed. No matter if you are an Intel or AMD gamer, the Hyper X FURY is ideal for you. To make sure it works, Hyper X FURY has been tested with popular brands of motherboards. Does your system have enough memory to get you into the game? Kits are available to max out your system's memory with up to 16GB of high-performance goodness. Brand Hyper X Item Weight 27 g Product

Dimensions 33 x 11.4 x 0.3 cm Item model number HX318C10FW/8 Color White RAM Size 8192 MB Computer Memory Type DDR3 SDRAM Voltage 1.5 volts

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Hyper X Impact memory boasts the world's fastest SO-DIMM frequency- 2666 M Hz
- to keep you ahead of the curve & level up your
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Attack the competition with Hyper X Savage memory. Its unique, asymmetrical red heat spreader is made from high-quality aluminum & has a black PCB & a diamond cut finish to make your game shine & help you stand out in the crowd. The heat spreader dissipates heat so your system stays cool & reliable & its low profile fits under oversized CPU coolers. Featuring a design that works well with the latest trends in gaming, Hyper X Savage comes in a wide range of high-performance speeds, from 1600 M Hz to 2400 M Hz, & capacities from 4GB to 8GB in single modules & 8GB to 32GB kits. In CL9-CL11 latencies, it delivers ultra-responsive multitasking & an overall faster system. Dual & quad channel kits are available. Built-in, h&-tuned XMP profiles let users reach higher-performing frequencies, timings & voltages simply by enabling Intel's XMP tool. Even noobs can overclock their platforms with no need for manual adjustments in BIOS. Hyper X Savage is backed by a lifetime warranty & free technical support. ...

Rely on Kingston memory for your Apple notebook or desktop. It’s guaranteed to be compatible with your Apple machine & delivers a great cost-performance benefit with better multitasking, smoother video streaming & better processing power. Kingston uses only the highest quality components to ensure maximum performance & reliability. Then each module is designed, manufactured, tested & tailored to maximise the performance of a specific Apple computer system. For added peace of mind, Kingston memory is backed by free technical support, a lifetime warranty & legendary Kingston reliability. Specifications Type: DRAM Storage Capacity: 8 GB Technology: DDR3 SDRAM Form Factor: SO DIMM 204-pin Memory Speed: 1600 MHz (PC3-12800 ) Data Integrity Check: Non-ECC RAM

Features: Unbuffered Data Integrity Check: Non-ECC Manufacturer Warranty: Limited lifetime manufacturer warranty Expansion / Connectivity Compatible Slots: 1 x memory
- SO DIMM 204-pin Supported Systems: Apple: i Mac 27-inch (Late 2012) Core i 5/i 7 Mac mini Core i 5 2.3/2.5 (Mid 2011) Mac mini Core i 5/i 7 (Late 2012) Mac mini Core i 7 2.0/2.7 (Mid 2011) Mac mini Server Core i 7 (Late 2012) Mac mini Server Core i 7 2.0/2.7 (Mid 2011) Mac Book Pro 13-inch & 15-inch (Mid 2012)


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