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HyperX Impact 8GB (1x8GB) Memory Module
HyperX Impact 8GB (1x8GB) Memory Module 1866MHz DDR3L CL11 SODIMM Non-ECC Unbuffered 135V HyperX HX318LS11IB8 is a 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8 low voltage memory modules based on sixteen 512M x 8-bit DDR3 FBGA components This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 135V or 15V JEDEC standard 135V (128V 145V) and 15V (1425V 1575V) Power Supply VDDQ 135V (128V 145V) and 15V (1425V 1575V) 933MHz fCK for 1866Mbsecpin 8 independent internal bank Programmable CAS Latency 13 11 10 9 8 7 6 5 Programmable Additive Latency 0 CL - 2 or CL - 1 clock 8-bit pre-fetch Burst Length 8 (interleave without any limit sequential with starting address &000& only) 4 with tCCD 4 which does not allow seamless read or write (either on
the fly using A12 or MRS) Bi-directional Differential Data Strobe Internal (self) calibration Internal self calibration through ZQ pin (RZQ 240 ohm ± 1) On Die Termination using ODT pin Average Refresh Period 78us at lower than TCASE 85°C 39us at 85°C < TCASE < 95°C degrees Asynchronous Reset PCB Height 1180 inch (3000mm) double sided component Memory Memory Size 8192 MB (1 module(s) x 8192 MB ) Memory Type DDR3L Memory Speed 1866 MHz Memory Package SO-DIMM Pin Configuration 204 pins Bus IO Configuration Unbuffered Error Correction Non ECC CAS Latency CL11 Electrical Voltage 135 V Environmental Operating Temperature 0 to 85 °C Non Operating Temperature -55 to 100 °C Physical Form Factor Memory Module Case Colour Black
the fly using A12 or MRS) Bi-directional Differential Data Strobe Internal (self) calibration Internal self calibration through ZQ pin (RZQ 240 ohm ± 1) On Die Termination using ODT pin Average Refresh Period 78us at lower than TCASE 85°C 39us at 85°C < TCASE < 95°C degrees Asynchronous Reset PCB Height 1180 inch (3000mm) double sided component Memory Memory Size 8192 MB (1 module(s) x 8192 MB ) Memory Type DDR3L Memory Speed 1866 MHz Memory Package SO-DIMM Pin Configuration 204 pins Bus IO Configuration Unbuffered Error Correction Non ECC CAS Latency CL11 Electrical Voltage 135 V Environmental Operating Temperature 0 to 85 °C Non Operating Temperature -55 to 100 °C Physical Form Factor Memory Module Case Colour Black
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