Darlington NPN Transistors
- On Semiconductor MPSA13G, Darlington Transistor, NPN Polarity, 30V Collector Emitter Voltage (Vceo), 30V Collector-Base Voltage (Vcbo), 10V Emitter-Base Voltage (Veb), 1.2A Collector Current, 625m W Power, 10000 DC Current Gain (hfe), 100n A Collector Cut-off Current, 1.5V Collector-Emitter Saturation Voltage, 125 M Hz Transition Frequency, TO-92 Case, Bulk, This Device is Designed for Applications Requiring Extremely High Current Gain at Collector Currents to 1A Mpsa 13 Dar Npn 30v 0.5a To-92b