Fairchild Semiconductor 2N7000 N Channel MOSFET

Product Description

Fairchild Semiconductor N Channel Low Power MOSFET Transistors
- Fairchild Semiconductor 2N7000, Enhancement mode field effect transistor, N-Channel type, 60V drain-source breakdown voltage, 1.2R drain-source on-resistance, 200m A drain current, 20V gate source voltage, 10ns turn-on time, 10ns turn-off time, 400m W power, TO-92 case, these n-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology, these products have been designed to minimize on-state resistance while provide rugged, reliable, & fast switching performance, high density cell design for low rds (on), voltage controlled small signal switch, rugged & reliable, high saturation current capability, they can be used in most applications requiring up to 400m A dc & can deliver pulsed currents up to 2A, these products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, & other switching applications, supplied in bulk pack. Fairchild Semiconductor 2N7000 N Channel MOSFET