Diodes Inc P Channel Low Power MOSFET Transistors
- Diodes Inc ZVP3306A, Enhancement mode vertical DMOS FET, P-Channel type, 60V drain-source breakdown voltage, 14R drain-source on-resistance, 160m A drain current, 20V gate source voltage, 8ns turn-on time, 8ns turn-off time, 625m W power, TO-92 case, 159mg weight, . Diodes Inc ZVP3306A P Channel MOSFET