HyperX IMPACT 16GB (2x8GB) 2400MHz DDR4 260-Pin CL14 SODIMM Laptop
Memory Module

Product Description

Available in capacities of up to 64GB, it features low CL13, CL14 & CL15 latencies, higher memory bandwidth & speeds up to 2666 M Hz to power through everything. It auto-overclocks for peak performance & runs efficiently at 1.2V. Optimised for Intel Notebooks; Optimised for Intel’s Series 100 & 200 chipsets to help future-proof your system. Hyper X DDR4 Pn P memory will run in most DDR4 systems up to the speed allowed by the manufacturer's system BIOS. RAM Performance SPD
- 2133 MHz
- 1.2 V
- CL13
- 13-13-13 Intel Extreme Memory Profiles (XMP 2.0)
- 2400 MHz
- 1.2 V
- CL14
- 14-14-14 Key Features Optimised for Intel’s Series 100 & 200 chipsets to help future-proof your system Automatic overclocking for a hassle-free boost XMP-ready profiles for easy custom tuning Low 1.2 standard voltage runs more efficiently Slim black thermal label & black PCB 100% Factory tested
- Total kit capacity is 16GB On-Die Termination (ODT) Black PCB Specifications Module Configuration: 1024 x 64 Voltage: 1.2 V Type: DRAM Technology: DDR4 SDRAM Form Factor: SO-DIMM 260-pin Module Height (inch): 1.18 Speed: 2400 MHz (PC4-19200) Latency Timings: CL14 (14-14-14) Data Integrity Check: Non-ECC Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18" (30.00mm) CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 45.75ns (min.) Refresh to Active/ Refresh 350ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W UL Rating 94 V
- 0 Operating Temperature 0°C to 85°C Storage Temperature -55°C to +100°C Box Contents 1 x Hyper X Impact 16GB (2 x 8GB) 2400 M Hz DDR4 SODIMM Memory