Optically coupled infrared emitting diodes & phototransistors in dual-in-line packages. Single type is in a 6-pin DIL package dual type is in an 8-pin DIL package & quad type is in a 16-pin DIL package. On the single type a base lead is provided so that the device may be biased in the conventional manner. Absolute maximum ratings Input to output voltage 1500 V Collector-base voltage Vsub CBOsub 70 V Collector-emitter voltage Vsub CEOsub 30 Vdual & quad 20 V Emitter-base voltage Vsub EBOsub 7VInput diode reverse voltage 3VInput diode continuousforward current 100m A Continuous power dissipation LED150m W Phototransistor 150m W Total 250m Wquad 450m W Electrical characteristics typical Input diode static reverse currentat Vsub Rsub 3V10micro A On state collector current Vsub C Esub 0.4V Isub Fsub 16m A Phototransistor operation Isub B sub 07m A Photodiode operation Isub Esub 020micro A Off-state collector current Vsub C Esub 10V Isub Fsub 0 Phototransistor operation Isub Bsub 01n A Photodiode operation Isub E sub 00.1n Ahsub F Esub Vsub C Esub 5V Isub C sub 10m A Isub Fsub 0300 Input diode Vsub Fsubat Isub F sub 16m A1.2 V Collector-emitter saturation voltage Isub C sub 2m A Isub Fsub 16m A Isub B sub 00.25 V Input to output resistance diode leadsshorted to transistor leads shorted at Vsubinsub to Vsubout sub 1.5k V10sup 11sup Omega Input to output capacitance 1p F Max operating frequencyphototransistor operation 125k Hzphotodiode operation 250k Hz Min transfer ratio 13