A silicon photodiode fabricated in PIN planar technology that can be operated either as a photodiode with reverse voltage or as a photovoltaic cell. The device is in a 5mm package and has solder tab terminals with 2.54mm0.1in. lead spacing. A daylight filter option SFH2030F is also available. Short leadflat on body denotes cathode.Specifications SFH2030 SFH2030FReverse voltage 30V 30VPower dissipation 100mW 100mWSpectral sensitivity VR5V 8050nAlxWavelength 950nmEe0.5mWcm2 2515nAlxWavelength at max.sensitivity 850nm 900nmSpectral range ofphotosensitivity 400 to 800 to 1100nm 1000nmSpectral sensitivitywavelength 850nm 0.62AW 0.62AWHalf angle plusmn20 plusmn20 Forward voltage
A highly sensitive linear NPN silicon phototransistor enclosed in a tubular 5mm plastic package that can be easilymounted into holes and preformed plastic sleeves e.g. LED mounting assemblies.The device features a clear plastic lens a 50 acceptance angle and a very low dark current. The collector has the shortest leg and is next to the flat on the package base. SpecificationsWavelength of maximumphotosensitivity850nmSpectral range of photosensitivity420nm to 1130nmHalf angleplusmn25 Capacitance6.5pFCollector emitter voltage35VCollector current50mACollector peak current100mA t10microsPower dissipation at 25 C200mWDark current5nAPhotocurrent collector to emitter1000lux Vsubcesub 5V0.63mA to 1.25mA
A silicon photodiode fabricated in PIN planar technology that can be operated either as a photodiode with reverse voltage or as a photovoltaic cell. The device is in a 5mm package and has solder tab terminals with 2.54mm0.1in. lead spacing. A daylight filter option SFH2030F is also available. Short leadflat on body denotes cathode.Specifications SFH2030 SFH2030FReverse voltage 30V 30VPower dissipation 100mW 100mWSpectral sensitivity VR5V 8050nAlxWavelength 950nmEe0.5mWcm2 2515nAlxWavelength at max.sensitivity 850nm 900nmSpectral range ofphotosensitivity 400 to 800 to 1100nm 1000nmSpectral sensitivitywavelength 850nm 0.62AW 0.62AWHalf angle plusmn20 plusmn20 Forward voltage
A high speed PIN photodiode designed to operate in the reverse biasmode. It offers low capacitance with high speed and high photosensitivity.The photodiode chip is moulded in a 5mm half round black infrared transmissive plastic package. This device is intended for remote control applications. Cathode denoted by shorter lead. Absolute maximum ratingsReverse voltage 20VPower dissipation 150mWElectrical characteristics
A photo emitting diode and a phototransistor housed in a compact package that can be used for counting rotational speed etc. The device has a very fast risefall time - just 1ms. Specification IF20mA ICE1mA VCE5VPhotocurrent RsubLsub20k230microa min.Saturation RsubLsub20k0.4VCross talk1.0microADark current IsubFsub0mA100nAVsubFsub1.7VVsubECOsub IsubCEsub1mA-3VVsubCEOsub IsubCEsub1mA12VRise time1msFall time1ms
A low cost high quality NPN silicon phototransistor having high illumination sensitivity fast response timeand low dark current. Encapsulated in a 3mm water clear resin package.The collector is denoted by a flat on the package and the shorter of the two leads there is no access to the base terminal. Similar to TIL78.Absolute maximum ratingsVltsubgtCE ltsubgt20VPltsubgtTOTltsubgt 75mWElectrical characteristicsLight currentVltsubgtCE ltsubgt3V 880nm 1000LuxMin 1.0mAMax 20mADark currentVltsubgtCE ltsubgt10V