An opto isolator device in a 6-pin DIL package comprising a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor. The input to output isolation can be up to 7500V peak guaranteed and the device meets or exceeds all JEDEC registered specifications.Specifications
A transistor optocoupler in a DIP-4 package with a low current input and a very high coupling transfer ratio CTR typically 120. The device has good CTR linearity relative to forward current and a high VCEO of 55Vdc. The device can be end stacked if necessary 2.54mm spacing.SpecificationsEmitter maximum ratings Reverse voltage6VDC forward current50mASurge forward current 10microS2.5ATotal power dissipation70mWDetector maximum ratingsVoltage VsubCEOsub55V VsubECOsub7VCollector current50mASurge collector current 1mS100mATotal power dissipation150mWCoupling capacitance0.25pFCoupling transfer ratio IsubFsub 1mA VsubCEsub 0.5V63 to 125 IsubF sub 0.5mA VsubCE sub 1.5V75 32
This opto isolator has a min transfer ratio of 100 and a 7500V peak isolation voltage 5300V rms. Pin-out is the same as WL35Q.Absolute maximum ratingsInput to output voltage 7500V peak 5300V RMSCollector-base voltage VltsubgtCBOltsubgt 70VCollector-emitter voltage VltsubgtCEOltsubgt 70VEmitter-base voltage VltsubgtEBOltsubgt 7VInput diode reverse voltage 3VInput diode continuous forward current 90mAContinuous power dissipationLED 135mWPhototransistor 200mWTotal 260mWElectrical characteristics typical
An optically coupled gallium arsenide infrared emitting LED and triac in a 6-pin DIL package. The triac has a 400V rating suitable for 240Vac mains and IT rms of 100mA maximum.Characteristics Forward voltage VsubFsub at IsubFsub 30mA1.3VContinuous forward current60mA maxLED current needed to latch output15mAHolding current200microAReverse voltage3V maxPIV triac400VIsubTsub rms triac100mAIsolation voltage7500V peak5300V rms
Optically coupled infrared emitting diodes and phototransistors in dual-in-line packages. Single type is in a 6-pin DIL package dual type is in an 8-pin DIL package and quad type is in a 16-pin DIL package.On the single type a base lead is provided so that the device may be biased in the conventional manner.Absolute maximum ratings Input to output voltage1500VCollector-base voltage VsubCBOsub70VCollector-emitter voltageVsubCEOsub30Vdual and quad 20VEmitter-base voltage VsubEBOsub7VInput diode reverse voltage3VInput diode continuousforward current100mAContinuous power dissipationLED150mWPhototransistor150mWTotal250mWquad450mWElectrical characteristics typicalInput diode static reverse currentat VsubRsub 3V10microAOn state collector currentVsubCEsub 0.4V IsubFsub 16mAPhototransistor operation IsubB sub 07mAPhotodiode operation IsubEsub 020microAOff-state collector currentVsubCEsub 10V IsubFsub 0Phototransistor operation IsubBsub 01nAPhotodiode operation IsubE sub 00.1nAhsubFEsub VsubCEsub 5V IsubC sub 10mA IsubFsub 0300Input diode VsubFsubat IsubF sub 16mA1.2VCollector-emitter saturation voltageIsubC sub 2mA IsubFsub 16mA IsubB sub 00.25VInput to output resistance diode leadsshorted to transistor leads shorted atVsubinsub to Vsubout sub 1.5kV10sup11supOmegaInput to output capacitance1pFMax operating frequencyphototransistor operation125kHzphotodiode operation250kHzMin transfer ratio13
Optically coupled infrared emitting diodes and phototransistors in dual-in-line packages. Single type is in a 6-pin DIL package dual type is in an 8-pin DIL package and quad type is in a 16-pin DIL package.On the single type a base lead is provided so that the device may be biased in the conventional manner.Absolute maximum ratings Input to output voltage1500VCollector-base voltage VsubCBOsub70VCollector-emitter voltageVsubCEOsub30Vdual and quad 20VEmitter-base voltage VsubEBOsub7VInput diode reverse voltage3VInput diode continuousforward current100mAContinuous power dissipationLED150mWPhototransistor150mWTotal250mWquad450mWElectrical characteristics typicalInput diode static reverse currentat VsubRsub 3V10microAOn state collector currentVsubCEsub 0.4V IsubFsub 16mAPhototransistor operation IsubB sub 07mAPhotodiode operation IsubEsub 020microAOff-state collector currentVsubCEsub 10V IsubFsub 0Phototransistor operation IsubBsub 01nAPhotodiode operation IsubE sub 00.1nAhsubFEsub VsubCEsub 5V IsubC sub 10mA IsubFsub 0300Input diode VsubFsubat IsubF sub 16mA1.2VCollector-emitter saturation voltageIsubC sub 2mA IsubFsub 16mA IsubB sub 00.25VInput to output resistance diode leadsshorted to transistor leads shorted atVsubinsub to Vsubout sub 1.5kV10sup11supOmegaInput to output capacitance1pFMax operating frequencyphototransistor operation125kHzphotodiode operation250kHzMin transfer ratio13