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Price: £ - £
Components > Optoelectronics > Infrared Devices
Available
SFH487-3 GaAs Infrared Emitting Diode SFH487-3
SFH487-3 GaAs Infrared
Emitting Diode SFH487-3

    - A GaAs infrared
    emitting diode in a
    standard T1 3mm size
    plastic package
    - Designed
Availability: In Stock
£1.29
Available
High Power Infrared EmittingDiode Infra-Red Emitter
High Power Infrared
EmittingDiode Infra-Red
Emitter
    A high power infrared
    emitter intended
    primarily forremote
    control applications.
    Encapsulated ina 5mm
    water-clear resin
    package. Cathode denoted
    by flat on packageshorter
    lead. Similar to
    TIL38.Absolute maximum
    ratingsPower dissipation
    100mWForward current
    100mAReverse voltage
    5VElectrical
    characteristics
Availability: In Stock
£1.09
Available
Infrared Transmitter Receiver Side Looking IR TX
Infrared Transmitter Receiver
Side Looking IR TX
    An infrared transmitter
    diode and a matching
    receiver photo-transistor
    in side looking packages
    ideal for mounting at the
    edge of a PCB or where
    beam break detection or
    data coupling is
    required. Maximum forward
    current for the diode is
    100mA continuous 1A peak
    300pps 1uS pulse.
    Luminous intensity is
    1.8mW at IF50mA with a 30
    viewing angle.
    Phototransistor VCEO is
    30 Volts with a max
    dissipation of 100mW.
    Light IC 20mA max and
    dark current is 100nA max
    viewing angle 70 risefall
    times5uS RL1K.
Availability: In Stock
£0.89
Archived Product
3mm Infrared Emitting Diode IRed emitting diode
3mm Infrared Emitting Diode
IRed Emitting Diode

    - A 3mm infrared emitting
    diode in a clear housing.
    - The Cathode is denoted
    by the
Availability: In Stock
£0.89
Available
Miniature Infrared Source Infra-Red Source
Miniature Infrared Source
Infra-Red Source
    A gallium arsenide
    infrared LED with a peak
    spectral wavelength of
    940nm. Encaspulated in a
    3mm water-clear resin
    package. Cathode denoted
    by flat on packageshorter
    lead. Similar to
    TIL32Absolute maximum
    ratingsPower dissipation
    80mWForward current
    60mAReverse voltage
    5VElectrical
    characteristics
Availability: In Stock
£0.99
Available
Infrared Transmitter Receiver Side Looking IR RX
Infrared Transmitter Receiver
Side Looking IR RX
    An infrared transmitter
    diode and a matching
    receiver photo-transistor
    in side looking packages
    ideal for mounting at the
    edge of a PCB or where
    beam break detection or
    data coupling is
    required. Maximum forward
    current for the diode is
    100mA continuous 1A peak
    300pps 1uS pulse.
    Luminous intensity is
    1.8mW at IF50mA with a 30
    viewing angle.
    Phototransistor VCEO is
    30 Volts with a max
    dissipation of 100mW.
    Light IC 20mA max and
    dark current is 100nA max
    viewing angle 70 risefall
    times5uS RL1K.
Availability: In Stock
£0.89
Available
LD271 Infrared Emitter LD271
LD271 Infrared Emitter LD271
    An infrared emitting
    diode that emits
    radiation in the near
    infrared range950nm peak.
    The emitted radiation
    which can be modulated is
    generated by forward
    flowing current. The
    deviceis enclosed in a
    5mm plastic package and
    has a lightly diffused
    grey plastic lens. This
    high intensity device has
    excellent long term
    stability and is designed
    to match with photodiode
    BP103B. A typical
    application is remote
    control of colour TV
    receivers.
    SpecificationsPeak
    wavelength
    emissionIsubFsub 100mA
    tsubPsub
    20ms950plusmn20nmSpectral
    bandwidth at 50
    ofIsubMAXsub at IsubFsub
    100mA tsubPsub
    20ms55nmHalf
    angleplusmn25 Switch time
    IsubFsub
    100mA1microsReverse
    voltage5VForward
    current130mASurge current
    t 10micros3.5AForward
    voltageIsubFsub 100mA
    tsubPsub
    20ms1.30VIsubFsub 1A
    tsubPsub
    100micros1.9VBreakdown
    voltage IsubRsub
    10microA30VReverse
    current VsubRsub
    5V0.01microACapacity
    VsubRsub 0V40pFPower
    dissipation at 25
    C210mWJunction
    temperature100 CRadiant
    intensityIsubFsub 100mA
    tsubPsub
    20ms15mWsrIsubFsub 1A
    tsubPsub 20micros100mWsr
Availability: In Stock
£0.99
Available
SFH409 GaAs Infrared Emitting Diode SFH409
SFH409 GaAs Infrared Emitting
Diode SFH409
    A GaAs infrared
    emittingdiode in a
    standard T1 3mm size
    plastic package that has
    been designed for a
    variety of low-cost high
    volume applications e.g.
    IR remote control and
    other consumer and
    entertainment products.
    The device is an
    excellentmatch with
    SFH309 phototransistor
    and features high pulse
    power good long term
    stability and a 40 wide
    beam. Lead spacing
    2.54mm.SpecificationsPeak
    wavelength emission
    IsubFsub 100mA tsubPsub
    20ms950plusmn20nmSpectral
    bandwidth at 50
    ofIsubMAXsub at IsubFsub
    100mA tsubPsub
    20ms55nmRadiant
    intensityIsubFsub 100mA
    tsubPsub
    20ms16mWsrIsubFsub 1A
    tsubPsub
    100micros150mWsrTotal
    radiant fluxIsubFsub
    100mA tsubPsub
    20ms14mWHalf
    angleplusmn20 Switch time
    IsubFsub
    100mA1microsForward
    current100mAReverse
    voltage5VSurge current t
    10micros3AForward
    voltageIsubFsub
    100mA1.30VIsubFsub 1A
    tsubPsub
    100micros1.9VBreakdown
    voltage IsubRsub
    100microA30VTypical
    reverse current VsubRsub
    5V0.01microACapacity
    VsubRsub 0V25pFPower
    dissipation at 25
    C165mWJunction
    temperature100 C
Availability: In Stock
£0.89
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