. 4GB 1600 M Hz DDR3L Non-ECC CL11 SODIMM 1.35 V Internal memory. 4 GB. Internal memory type. DDR3. Memory clock speed. 1600 MHz. Component for. Notebook. ECC. No. Memory form factor. 204-pin SO-DIMM. Memory layout (modules x size). 1 x 4 GB. CAS latency. CL11. Memory voltage. 1.35; 1.5 V. Registered. No. Memory bus. 64 bit. Lead plating. Gold. Module configuration. 512M X 64. Memory. Row cycle time. 48.125 ns. Refresh row cycle time. 260 ns. Row active time. 35 ns. Operational conditions. Operating temperature (T-T). 0
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