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Silicon Power 1GB DDR2 SDRAM 667MHz Laptop Memory Module

Silicon Power 1GB DDR2 SDRAM 667MHz Laptop Memory Module The SP001GBSRU667S02 is a 128M x 8bits Double Data Rate SDRAM high-density for DDR2-667.The SP001GBSRU667S02 consists of 8pcs CMOS 128Mx8 bits Double Data Rate SDRAMs in 60 ball FBGA packages, and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The SP001GBSRU667S02 is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Specifications Fast data transfer rates: PC2-5300 200-pin,
unbuffered dual in-line memory module VDD = VDDQ = +1.8V, VDDSPD = +1.7V to +3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8, 192-cycle refresh On-die termination (ODT) 60ball FBGA Leaded & Pb-Free (RoHS compliant) package
RIP - This product is no longer available on our network. It was last seen on 22.07.2020

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  • Availability: Out Of Stock
  • Supplier: Gizzmo Heaven
  • SKU: STUFF-SP001GBSRU667S02-GM
Availability: In Stock
£5.75

Product Description

Silicon Power 1GB DDR2 SDRAM 667 M Hz Laptop Memory Module The SP001GBSRU667S02 is a 128M x 8bits Double Data Rate SDRAM high-density for DDR2-667. The SP001GBSRU667S02 consists of 8pcs CMOS 128 Mx 8 bits Double Data Rate SDRAMs in 60 ball FBGA packages, & a 2048 bits serial EEPROM on a 200-pin printed circuit board. The SP001GBSRU667S02 is a Dual In-Line Memory Module & is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Specifications Fast data transfer rates: PC2-5300 200-pin, unbuffered dual in-line memory module VDD = VDDQ = +1.8V, VDDSPD = +1.7V to +3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS) option Four-bit prefetch architecture DLL to align DQ & DQS transitions with CK Multiple internal device banks for concurrent operation Posted CAS additive latency (AL) WRITE latency = READ latency
- 1 t CK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8, 192-cycle refresh On-die termination (ODT) 60ball FBGA Leaded & Pb-Free (Ro HS compliant) package

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CMOS - Complementary metal oxide semiconductor
DDR2 - Double Data Rate synchronous dynamic random access memory
PC2-5300 - 667 million transfers per second (DDR2-667)
Clock - A device used for telling the time
edge - Enhanced data rates for GSM evolution also known as enhanced GPRS. A mobile phone technology with improved data transmission rates.
edge - The point at which two surfaces meet
Precise - A measurement on the accuracy of something
Adjustable - Something that can be changed or slightly modified to fit.
Design - A drawing or styles that shows the look and functionality of something before its made.
Adjustable - Something that can be changed in order to fit better.
Performance - When someone is presenting a form of entertainment, also how well someone is doing within a role.
Memory - A way to describe the way in which the brain can remember things.

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Gizzmo Heaven
Page Updated: 2014-08-16 16:43:41

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