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Samsung 845DC PRO 400GB 2.5inch Data Centre SSD
Samsung 845DC PRO 400GB 2.5inch Data Centre SSD Designed for server and data center use, our 845DC PRO Solid State Drive (SSD) offers better performance to handle heavy write intensive applications. Tantalum capacitors protect all data in the write cache in case of power failure, combined with low power consumption and a 5-year limited warranty. High Sustained Performance, Strong IOPS Consistency and Low Latency Overlapped Protection Gates for Outstanding Reliability 3D V-NAND Technology for Up to 10x Higher Endurance Built from 100% Samsung Components for End to End Full Integration TYPE Product Type: SSD/SATA/Solid State Drives TYPE Interface: Serial ATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s), Fully complies with ATA/ATAPI-7 Standard(Partially Complies with ATA/ATAPI-8),
Support NCQ: Up to 32 depth FEATURES Sequential Read Speed: Up to 530 MB/s FEATURES Memory Speed: 512MB TYPE Series: 845DC PRO STORAGE Capacity: 400GB FEATURES Sequential Write Speed: Up to 460 MB/s Data Center Mixed and write-intensive usages are recommended Random Read Speed Max. 92, 000 IOPS Random Write Speed Max. 50, 000 IOPS CAS Latency Sequential: Read: 45 us, Write: 40us, Random: Read: 110us, Write: 50us Controller Samsung 3-core MDX controller NAND Flash Samsung 3D V-NAND 2bit MLC Power Consumption (W) Active (Read / Write): 1.7 W / 3.1W, Idle: 1.0W Reliability (MTBF) Mean Time Between Failures (MTBF): 2, 000, 000 hours, Uncorrectable Bit Error Rate (UBER): 1 sector per 1017 bits read, End-to-end data protection Operating Temperature 32°F to 158°F Non-operating
Temperature -40°F to 185°F Operating Humidity 5% to 95%, non-condensing FORM FACTOR 2.5” type DIMENSIONS (W X H X D) Product (3.9"±0.01") x (2.75"±0.01") x (0.27"±0.008")
Support NCQ: Up to 32 depth FEATURES Sequential Read Speed: Up to 530 MB/s FEATURES Memory Speed: 512MB TYPE Series: 845DC PRO STORAGE Capacity: 400GB FEATURES Sequential Write Speed: Up to 460 MB/s Data Center Mixed and write-intensive usages are recommended Random Read Speed Max. 92, 000 IOPS Random Write Speed Max. 50, 000 IOPS CAS Latency Sequential: Read: 45 us, Write: 40us, Random: Read: 110us, Write: 50us Controller Samsung 3-core MDX controller NAND Flash Samsung 3D V-NAND 2bit MLC Power Consumption (W) Active (Read / Write): 1.7 W / 3.1W, Idle: 1.0W Reliability (MTBF) Mean Time Between Failures (MTBF): 2, 000, 000 hours, Uncorrectable Bit Error Rate (UBER): 1 sector per 1017 bits read, End-to-end data protection Operating Temperature 32°F to 158°F Non-operating
Temperature -40°F to 185°F Operating Humidity 5% to 95%, non-condensing FORM FACTOR 2.5” type DIMENSIONS (W X H X D) Product (3.9"±0.01") x (2.75"±0.01") x (0.27"±0.008")
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