Get your notebook or small-form-factor machine fully equipped with Hyper X Impact DDR4 SODIMM & minimise system lag. XMP-ready in capacities of up to 64GB, Plug n Play Hyper X Impact DDR4 automatically overclocks to the highest frequency published, up to 3200 M Hz 1, to support Intel & AMD’s latest CPU technologies. Slot in the sleek black PCB for a hassle-free boost, no need to tinker with the BIOS. Upgrade your system’s performance & still run coolly, quietly & efficiently, thanks to Hyper X Impact DDR4’s low 1.2 voltage. 1. Hyper X DDR4 Pn P memory will run in most DDR4 systems up to the speed allowed by the manufacturers system BIOS. Pn P cannot increase the system memory speed faster than is allowed by the manufacturers BIOS. Memory overclocking is locked at 2133 M Hz (Skylake) or 2400 M Hz (Kaby Lake) on all mobile processors except H Series Core i 7 processors (i 7-xxxx HQ or i 7-xxxx HK). Main Features Optimized for Intels Series 100 & 200 chipsets 4GB-16GB capacities, frequencies up to 2666 M Hz Automatic overclocking for a hassle-free boost XMP-ready profiles for easy custom tuning Low 1.2 standard voltage runs more efficiently ...

Hyper X HX424S14IBK2/32 is a kit of two 2G x 64-bit (16GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 2 Rx 8, memory module, based on sixteen 1G x 8-bit DDR4 FBGA components. Total kit capacity is 32GB. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Features Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) Specifications CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 45.75ns (min.) Refresh to Active/ Refresh 350ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0°C to 85°C Storage Temperature -55°C to +100°C

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Hyper X HX424S14IB/16 is a 2G x 64-bit (16GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 2 Rx 8, memory module, based on sixteen 1G x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Features Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) Specifications CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh 350ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0°C to 85°C Storage Temperature -55°C to +100°C * Power will vary depending on the SDRAM used. HX424S14IB/16 16GB 2G x 64-Bit DDR4-2400 CL14 260-Pin SODIMM

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Hyper X Impact 16GB Kit (2x 8GB) DDR4 2133 M Hz SODIMM Memory DESCRIPTION Hyper X HX421S13IBK2/16 is a kit of two 1G x 64-bit (8GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 2 Rx 8, memory modules, based on sixteen 512M x 8-bit DDR4 FBGA components. Total kit capacity is 16GB. Each module kit supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: The Pn P feature offers a range of speed & timing options to support the widest variety of processors & chipsets. Your maximum speed will be determined by your BIOS. Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0°C to 85°C Storage Temperature -55°C to +100°C * Power will vary depending on the SDRAM used. FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm)

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Hyper X Impact 16GB Kit DDR4 2400 M Hz SODIMM Memory (2x 8GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact 4GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact 4GB DDR4 2400 M Hz SODIMM Memory Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact 8GB DDR4 2133 M Hz SODIMM Memory Hyper X HX421S13IB/4 is a 512M x 64-bit (4GB) DDR4-2133 CL13 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2133 at a low latency timing of 13-13-13 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: JEDEC/ Pn P: DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2133 CL13-13-13 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 13 cycles Row Cycle Time (t R Cmin) 46.5ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 33ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X Impact 8GB Kit DDR4 2400 M Hz SODIMM Memory (2x 4GB) Hyper X HX424S14IB/4 is a 512M x 64-bit (4GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 512M x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Additional timing parameters are shown in the Pn P Timing Parameters section below. The JEDEC standard electrical & mechanical specifications are as follows: Pn P JEDEC TIMING PARAMETERS: JEDEC/ Pn P: DDR4-2400 CL14-14-14 @1.2V DDR4-2133 CL13-13-13 @1.2V XMP Profile 1: DDR4-2400 CL14-14-14 @1.2V FEATURES Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) SPECIFICATIONS CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 46.75ns (min.) Refresh to Active/ Refresh Command Time (t RFCmin) 260ns (min.) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0oC to +85oC Storage Temperature -55oC to +100oC * Power will vary depending on the SDRAM used.

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Hyper X HX424S14IB2/8 is a 1G x 64-bit (8GB) DDR4-2400 CL14 SDRAM (Synchronous DRAM) 1 Rx 8, memory module, based on eight 1G x 8-bit DDR4 FBGA components. Each module supports Intel Extreme Memory Profiles (Intel XMP) 2.0. This module has been tested to run at DDR4-2400 at a low latency timing of 14-14-14 at 1.2V. Features Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP
- 2.5V Typical VDDSPD = 2.25V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) Height 1.18” (30.00mm) Specifications CL (IDD) 14 cycles Row Cycle Time (t R Cmin) 45.75ns (min.) Refresh to Active/ Refresh 350ns (min.) Command Time (t RFCmin) Row Active Time (t RASmin) 29.125ns (min.) Maximum Operating Power TBD W* UL Rating 94 V
- 0 Operating Temperature 0°C to 85°C Storage Temperature -55°C to +100°C

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