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Toshiba 512GB SSD 2.5
This family of solid state drives (SSDs) utilises the advanced Multi-Level Cell (MLC) 19nm NAND technology from Toshiba. With an unrivalled combination of capacity, performance and power efficiency, the THNSNH range delivers an uncompromised storage solution for high end and thin notebooks, tablets, PCs, all-in-one desktop computers as well as industrial PC applications. The small form factor drives boast a high capacity of up to 512 GB and are available in a range of sizes. The THNSNH range of SSDs features Toshiba’s QSBCTM (Quadruple Swing-By Code), a strong and highly efficient Error Correction Code (ECC) protecting against any read errors in the device. Furthermore, deterministic zeroing TRIM function is supported, allowing the host operating system to inform the SSD
about data blocks which are no longer in use and can be wiped internally. The THNSNH series also utilises Advanced Power Management (APM) technology to ensure the lowest levels of energy consumption. With an additional ‘data corrupt protection’ feature, the SSDs protect any data which is being moved internally, against unexpected power-loss and write errors. The THNSNH is one of the most desirable SSD solutions available on the market today ensuring Toshiba as the NAND Flash technology leader. Key Advantages: Up to 512GB of Storage Capacity 2.5-inch, 7.0 mm Height 19 nm MLC NAND Flash Fast Access and Transfer Rates Excellent Power Consumption Toshiba Strong Error Correction Code (QSBC) Data Corrupt Protection from Unexpected Power Loss Applications High-end and thin / light
notebooks All-in-one desktop computers Consumer and industrial PCs Tablets Specification Storage Capacity, Formatted: 512GB NAND Technology Interface: 19nm MLC NAND Interface: SATA-III 6Gb/s Max. Sequential Read: 534 MB/s (510 MiB/s) Max. Sequential Write: 482 MB/s (460 MiB/s) Random IOPS@4k KiB, QD=32 Read (max): 90, 000 Random IOPS@4k KiB, QD=32 Write (max): 35, 000 MTBF 1.5: Mhours Width x Depth x Height: 69.85 x 100.0 x 7.0 mm Weight max.: 53g Supply Voltage: 5V Shock (op.): 0.5 ms half s/w (m/s²) (G) 14, 700 (1, 500) Case Temp. (op.): 0-70 °C
about data blocks which are no longer in use and can be wiped internally. The THNSNH series also utilises Advanced Power Management (APM) technology to ensure the lowest levels of energy consumption. With an additional ‘data corrupt protection’ feature, the SSDs protect any data which is being moved internally, against unexpected power-loss and write errors. The THNSNH is one of the most desirable SSD solutions available on the market today ensuring Toshiba as the NAND Flash technology leader. Key Advantages: Up to 512GB of Storage Capacity 2.5-inch, 7.0 mm Height 19 nm MLC NAND Flash Fast Access and Transfer Rates Excellent Power Consumption Toshiba Strong Error Correction Code (QSBC) Data Corrupt Protection from Unexpected Power Loss Applications High-end and thin / light
notebooks All-in-one desktop computers Consumer and industrial PCs Tablets Specification Storage Capacity, Formatted: 512GB NAND Technology Interface: 19nm MLC NAND Interface: SATA-III 6Gb/s Max. Sequential Read: 534 MB/s (510 MiB/s) Max. Sequential Write: 482 MB/s (460 MiB/s) Random IOPS@4k KiB, QD=32 Read (max): 90, 000 Random IOPS@4k KiB, QD=32 Write (max): 35, 000 MTBF 1.5: Mhours Width x Depth x Height: 69.85 x 100.0 x 7.0 mm Weight max.: 53g Supply Voltage: 5V Shock (op.): 0.5 ms half s/w (m/s²) (G) 14, 700 (1, 500) Case Temp. (op.): 0-70 °C
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