Specifications Sequential Read
- 500 MB/s Sequential Write
- 200 MB/s Random Read (100% Span)
- 75000 IOPS Random Write (100% Span)
- 19000 IOPS Latency Read
- 50 µs Latency Write
- 65 µs Power Active
- 2.9 W Power Idle
- 650 m W Vibration Operating
- 2.17 GRMS (5-700 Hz) Vibration Non-Operating
- 3.13 GRMS (5-800 Hz) Shock (Operating & Non-Operating)
- 1, 000 G/0.5 msec Operating Temperature
- 0 C to 70 C Weight
- 70 grams ± 2 grams Endurance Rating (Lifetime Writes)
- 10 drive writes per day for 5 years Mean Time Between Failures (MTBF)
- 2 million hours Uncorrectable Bit Error Rate (UBER)
- 1 sector per 10 17 bits read Components
- Intel NAND Flash Memory Multi-Level Cell (MLC) Technology Capacity
- 100 GB Form Factor
- 2.5" Interface
- SATA 6 Gb/s Lithography
- 25 nm