Samsung's flash memory is fabricated using an excellent 3D V-NAND architecture, which stacks 32 cell layers on top of one another rather than trying to decrease the cells' length & width to fit today's shrinking form factors. The result is higher density & higher performance using a smaller footprint & a breakthrough in overcoming the density limits of conventional planar NAND architecture. The result
- enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory & enhanced energy-efficiency with the 3-core MEX controller.