This document describes Kingstons 512M x 64-bit (4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM), 2 Rx 8 memory module, based on sixteen 256M x 8-bit FBGA components. This module has been tested to run at DDR3 1600 at a low latency timing of 9-9-9-27 at 1.65V. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM uses gold contact fingers. **FEATURES**
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667 M Hz f CK for 1333 Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL
- 2, or CL
- 1 clock
- Programmable CAS Write Latency (CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with t CCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 1.180" (30.00mm), double sided component