Consisting of an infrared LED and a counterpart of an NPN photo transistor, poured into a black thermoplastic housing with an air gap between the two components. The photo transistor switches when an opaque object is moving through this air gap and interrupts the infra red beam.
The (TS-AlGaAs) aluminium gallium arsenide substrate results in a very high output and high speed operation across a wide range of conditions. This LED has been specially designed for IR data transfer in modems or for audio transfer and meets all the requirements of the IRDA (Infrared Data Tranasfer) standard.
Consisting of an infrared LED and a counterpart of an NPN photo transistor, poured into a black thermoplastic housing with an air gap between the two components. The photo transistor switches when an opaque object is moving through this air gap and interrupts the infra red beam.